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Proceedings Paper

New mask having functions of OAI and PSM to realize sub-0.2-um patterns with 248 nm in microlithography
Author(s): Xiangang Luo; HanMin Yao; Xunan Chen; Feng Boru
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Paper Abstract

New mask, which combines off-axis illumination using micro- profile and phase shift layer, is proposed. The physical mechanism of resolution and DOF enhancement of the mask is briefly discussed. Some results of simulation to investigate the basic lithographic characteristics of the mask are presented. Finally, experiments in i-line exposure systems have been carried out, and the result verified the enhancement of lithographic performance. In i-line exposure systems, we obtained best resolution of 0.30 micron and 2.34 micron DOF for 0.6 micron feature size. In our simulation, with 248 nm exposure wavelength, 0.16 micron pattern size can be realized with 2.0 micron DOF, and the proximity effect decreased obviously.

Paper Details

Date Published: 26 July 1999
PDF: 5 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354391
Show Author Affiliations
Xiangang Luo, Institute of Optics and Electronics (China)
HanMin Yao, Institute of Optics and Electronics (China)
Xunan Chen, Institute of Optics and Electronics (China)
Feng Boru, Institute of Optics and Electronics (China)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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