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Proceedings Paper

Optical proximity correction for submicron lithography by laser direct writing
Author(s): Yongkang Guo; Jinglei Du; Qizhong Huang; Jun Yao; Chuankai Qiu; Zheng Cui
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Paper Abstract

Generally, a laser direct writing lithography system can only produce feature sizes larger than its beam spot size. When the feature size is comparable to its spot size, corner rounding and line shortening appears. This is caused by optical proximity effect. The effect is mainly due to light intensity spread in a laser beam which causes the spread of photon energy in resist layer. A new pre-compensation method has been developed to correct the optical proximity effect. The method has been implemented in the ISI-2802 laser direct write system. Feature size down to 0.6 micrometers has been produced with the system which normally can only produce 1 micrometers lithography without proximity correction.

Paper Details

Date Published: 26 July 1999
PDF: 5 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354383
Show Author Affiliations
Yongkang Guo, Sichuan Univ. (China)
Jinglei Du, Sichuan Univ. (China)
Qizhong Huang, Sichuan Univ. (China)
Jun Yao, Sichuan Univ. (United Kingdom)
Chuankai Qiu, Institute of Optics and Electronics (China)
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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