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Proceedings Paper

Application of a new approach to optical proximity correction
Author(s): Anja Rosenbusch; Andrew C. Hourd; Casper A. H. Juffermans; Hartmut Kirsch; Frederic P. Lalanne; Wilhelm Maurer; Carmelo Romeo; Kurt G. Ronse; Patrick Schiavone; Michal Simecek; Olivier Toublan; Tom Vermeulen; John G. Watson; Wolfram Ziegler; Rainer Zimmermann
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Paper Abstract

Optical proximity correction is one of the major hurdles chip manufacturing has to overcome. The paper presents evaluation results of CAPROX OPC, a rule based OPC software. Mask making influences as well as production requirements are discussed. Rule generation, one of the most critical parts in a rule based correction scheme is discussed. Two different applications are presented.

Paper Details

Date Published: 26 July 1999
PDF: 9 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354378
Show Author Affiliations
Anja Rosenbusch, Sigma-C GmbH (Germany)
Andrew C. Hourd, Compugraphics International, Ltd. (United Kingdom)
Casper A. H. Juffermans, Philips Research Labs. (Belgium)
Hartmut Kirsch, Sigma-C GmbH (Germany)
Frederic P. Lalanne, CNET-STMicroelectronics (France)
Wilhelm Maurer, Siemens AG (United States)
Carmelo Romeo, STMicroelectronics (United States)
Kurt G. Ronse, IMEC (Belgium)
Patrick Schiavone, France Telecom CNET-CNS (France)
Michal Simecek, Sigma-C GmbH (Germany)
Olivier Toublan, France Telecom CNET-CNS (France)
Tom Vermeulen, IMEC (United States)
John G. Watson, Rutherford Appleton Lab. (United Kingdom)
Wolfram Ziegler, Siemens AG (Germany)
Rainer Zimmermann, Siemens AG (Germany)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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