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Proceedings Paper

Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-um mask pattern
Author(s): Yong-Ho Oh; Jai-Cheol Lee; Sungwoo Lim
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Paper Abstract

As the design rule of semiconductor microchips gets smaller, the distortion of a patterned image due to the optical proximity effect (OPE) becomes the limiting factor in the mass production. We developed an optical proximity correction (OPC) program that can be applied to a strong or attenuated phase shift mask as well as to a binary mask. The OPC program named OPERA is based on a stochastic approach as other rule-free OPC programs, but it has tow remarkable points. Firstly, proper cost function and optimization strategy enable us to achieve very closely clustered mask pattern that could be manufactured at a reasonable cost. Secondly, OPERA can carry out the optimization of illumination parameters for any modified illumination methods, such as, annular or quadrupole using the critical dimensions information of mask patterns.

Paper Details

Date Published: 26 July 1999
PDF: 7 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354373
Show Author Affiliations
Yong-Ho Oh, Wonkwang Univ. (South Korea)
Jai-Cheol Lee, Wonkwang Univ. (South Korea)
Sungwoo Lim, Wonkwang Univ. (South Korea)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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