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Proceedings Paper

Full-depth optical proximity correction (FD-OPC) based on E-D forest
Author(s): Burn Jeng Lin; Peter Young
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Paper Abstract

When the k1 number approaches 0.6 and below, optical proximity correction (OPC) is inevitable. Most existing OPC schemes correct the image in the focal planes without considering the possibility of different optimum focuses for the features to be corrected. Furthermore, OPC is often conducted without optimizing NA and (sigma) before and after, to save experimental or simulation work. In this paper, a full-depth OPC scheme is presented. It optimizes the individual size bias of contributing features in the entire exposure-defocus space using the E-D tree methodology. In addition, the OPC scheme integrates with signamization to fully automatically optimize NA, (sigma) , and individual feature bias together.

Paper Details

Date Published: 26 July 1999
PDF: 7 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354372
Show Author Affiliations
Burn Jeng Lin, Linnovation, Inc. (Taiwan)
Peter Young, Linnovation, Inc. (United States)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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