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Proceedings Paper

Clear-field alternating PSM for 193-nm lithography
Author(s): Patrick Schiavone; Frederic P. Lalanne; Alain Prola
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Paper Abstract

An alternating phase shift mask for 193m lithography has been generated using a proprietary software tool. The clear field mask allows a single exposure processing. Progressive phase transition is used to avoid the unwanted printing of the 0 degree to 180 degree phase step. A resolution below the exposure wavelength and close to the theoretical limits of the tool could be achieved. 180nm pitch grating could be printed successfully using a numerical aperture of 0.6. This is, to our knowledge the best lithographic performance reported until now using 193nm illumination. However, out of focus imagin shows evidence of a non-negligible phase error. It is shown through atomic force microscopy analysis that the dependence of the etch depth on phase-shifter width can explain this phasers offset. The influence of the quartz etch process on the phase-shift accuracy is proved to be a key issue of the strong PSM manufacturing.

Paper Details

Date Published: 26 July 1999
PDF: 8 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354370
Show Author Affiliations
Patrick Schiavone, France Telecom CNET-CNS (France)
Frederic P. Lalanne, France Telecom CNET-CNS (France)
Alain Prola, France Telecom CNET-CNS (France)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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