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Proceedings Paper

ArF step-and-scan exposure system for 0.15-um and 0.13-um technology nodes
Author(s): Jan Mulkens; Judon M. D. Stoeldraijer; Guy Davies; Marcel Dierichs; Barbra Heskamp; Marco H. P. Moers; Richard A. George; Oliver Roempp; Holger Glatzel; Christian Wagner; Ingrid Pollers; Patrick Jaenen
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Paper Abstract

This paper presents an evaluation on the 0.15 micrometers and 0.13 micrometers lithographic patterning alternatives for semiconductor devices. Baseline for the evaluation is a first generation ArF step and scan exposure system with 0.63 NA projection optics. The system layout is discussed and main performance data on imaging, overlay and throughput are presented. Binary masks, and various advanced 193 nm resist system are used to evalute process latitudes of dense lines, isolated lines and contact holes. The manufacturing economics, expressed in Cost Of Ownership, are evaluated for an ArF based production technology, and compared to critical layer KrF.

Paper Details

Date Published: 26 July 1999
PDF: 16 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354362
Show Author Affiliations
Jan Mulkens, ASM Lithography BV (Netherlands)
Judon M. D. Stoeldraijer, ASM Lithography BV (Netherlands)
Guy Davies, ASM Lithography BV (Netherlands)
Marcel Dierichs, ASM Lithography BV (Netherlands)
Barbra Heskamp, ASM Lithography BV (Netherlands)
Marco H. P. Moers, ASM Lithography BV (Netherlands)
Richard A. George, ASM Lithography BV (Netherlands)
Oliver Roempp, Carl Zeiss (Germany)
Holger Glatzel, Carl Zeiss (United States)
Christian Wagner, Carl Zeiss (Germany)
Ingrid Pollers, IMEC (Belgium)
Patrick Jaenen, IMEC (Belgium)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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