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Proceedings Paper

Combination of OPC and AttPSM for patterning sub-0.18-μm logic devices
Author(s): Hung Jui Kuo; Chia-Hui Lin; San-De Tzu; Anthony Yen
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Paper Abstract

Phase-shifting mask (PSM) and modified illumination techniques have shown promise in improving resolution and process latitude in optical lithography. Here we present a combination of attenuated PSM and optical proximity correction (OPC) for the patterning of 0.15 micrometers polysilicon lines. Using the combination method, we obtained a depth of focus of 0.9 micrometers DOF for 0.15 micrometers isolated lines, much wider than that achieved in a binary mask without OPC. Furthermore, we confirmed that this method is also effective for improving the exposure latitude.

Paper Details

Date Published: 26 July 1999
PDF: 11 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354356
Show Author Affiliations
Hung Jui Kuo, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chia-Hui Lin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
San-De Tzu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (United States)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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