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Proceedings Paper

Higher-order aberration measurement with printed patterns under extremely reduced sigma illumination
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Paper Abstract

Measurement techniques for higher order aberrations of a projection optical system in photolithographic exposure tools have been established. Even-type and odd-type aberrations are independently obtained from printed grouped lines on a wafer by three-beam interference under highly coherent illumination. Even-type aberrations, i.e. spherical aberration and astigmatism, are derived from the best focus position of vertical, horizontal and orthogonal grouped lines by an optical microscope. Odd-type aberrations, i.e. coma and trefoil, are obtained by detecting relative shifts of fine grouped lines to a large pattern by an overlay inspection tool. The qualitative diagnosis for lens aberrations was demonstrated to a krypton fluoride excimer laser scanner.

Paper Details

Date Published: 26 July 1999
PDF: 10 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354348
Show Author Affiliations
Hiroshi Nomura, Toshiba Corp. (Japan)
Kazuo Tawarayama, Toshiba Corp. (Japan)
Takuya Kohno, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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