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Proceedings Paper

193-nm lithography on a full-field scanner
Author(s): Anne-Marie Goethals; Ingrid Pollers; Patrick Jaenen; Frieda Van Roey; Kurt G. Ronse; Barbra Heskamp; Guy Davies
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Paper Abstract

In this paper, the lithographic performance of advanced 193 nm resist materials has been evaluated on a full field step and scan system. Single layer and bi-layer resist processes are compared in terms of performance and complexity. Optimization of illumination conditions is investigated as a way to enlarge processing windows and to reduce iso-dense bias. The application of a PSM illustrates the extendibility of 193 nm lithography for the 100- nm technology node.

Paper Details

Date Published: 26 July 1999
PDF: 12 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354340
Show Author Affiliations
Anne-Marie Goethals, IMEC (Belgium)
Ingrid Pollers, IMEC (Belgium)
Patrick Jaenen, IMEC (Belgium)
Frieda Van Roey, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)
Barbra Heskamp, ASM Lithography BV (Netherlands)
Guy Davies, ASM Lithography BV (Netherlands)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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