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Proceedings Paper

Matching simulation and experiment for chemically amplified resists
Author(s): Chris A. Mack; Monique Ercken; Myriam Moelants
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Paper Abstract

In this paper, the method for tuning a lithography simulator to match simulation to experiment, proposed by Thornton and Mack, was extended to a chemically amplified deep-UV resist process. After performing the Thornton-Mack tuning, the post-exposure bake (PEB) parameters of the resist were adjusted in the simulator to mach experimental results. In particular, measurements of Eo versus time and temperature of the PEB were used to 'calibrate' the actual PEB hotplate to the simulated hotplate and to estimate the amount of base quencher in the resist. Once tuned, the simulator was used to predict CD performance and compared to experimental results.

Paper Details

Date Published: 26 July 1999
PDF: 10 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354330
Show Author Affiliations
Chris A. Mack, FINLE Technologies, Inc. (United States)
Monique Ercken, IMEC (Belgium)
Myriam Moelants, IMEC (Belgium)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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