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Proceedings Paper

Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm
Author(s): Cheng-ming Lin; Keh-wen Chang; Ming-der Lee; Wen-An Loong
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Paper Abstract

Abstract-Five materials which are PdSixOy, CrAlxOy, SiNx, TiSixNy, and TiSixOyNz as absorptive shifters for attenuated phase-shifting mask in 193 nm wavelength lithography are presented. PdSixOy films were deposited by dual e-gun evaporation. CrAlxOy, TiSixNy and TiSixOyNz films were formed by plasma sputtering and SiNx films were formed with LPCVD. All of these materials are shown to be capable of achieving 4 percent - 15 percent transmittance in 193 nm with thickness that produce a 180 degrees phase shift. Under BCl3:Cl2 equals 14:70 sccm; chamber pressure 5 mtorr and RF power 1900W, the dry etching selectivity of TiSixNy over DQN positive resist and fused silica, were found to be 2:1 and 4,8:1 respectively. An embedded layer TiSixNy with 0.5 micrometers line/space was successfully patterned.

Paper Details

Date Published: 26 July 1999
PDF: 6 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354320
Show Author Affiliations
Cheng-ming Lin, National Chiao Tung Univ. (Taiwan)
Keh-wen Chang, National Chiao Tung Univ. (Taiwan)
Ming-der Lee, National Chiao Tung Univ. (Taiwan)
Wen-An Loong, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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