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Proceedings Paper

Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks
Author(s): Hsuen-Li Chen; Lon A. Wang; L. S. Yeh; F. D. Lai
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Paper Abstract

Suitable silicon-oxynitride films for constructing the attenuated phase shifting masks to be operated in the 157 nm excimer laser regime are obtained by varying the gas flow rations in a RF sputtering process. Characteristics of the films such as optical constants, material compositions, etching selectivity, surface profiles, and adhesion strength are experimentally analyzed. These results indicate that he silicon-oxynitride films thus fabricated can meet the requirements for building such APSM's working in the wavelength of 157 nm.

Paper Details

Date Published: 26 July 1999
PDF: 8 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354314
Show Author Affiliations
Hsuen-Li Chen, National Taiwan Univ. (Taiwan)
Lon A. Wang, National Taiwan Univ. (Taiwan)
L. S. Yeh, National Taiwan Univ. (Taiwan)
F. D. Lai, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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