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Proceedings Paper

Line-narrowed ArF excimer laser for 193-nm lithography
Author(s): Takashi Saito; Ken-ichi Mitsuhashi; Motohiro Arai; Kyouhei Seki; Akifumi Tada; Tatsushi Igarashi; Kazuaki Hotta
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Paper Abstract

Recently, considerable progress has been made in the development of ArF excimer lasers for 193 nm lithography. A line-narrowed ArF excimer laser with a bandwidth of < 0.7 pm can be used with a refractive lens system. In this paper, we present a line-narrowed ArF excimer laser which we have developed for 193 nm lithography. This laser produces an output power of over 5 W with a 0.6 pm FWHM bandwidth at 1 kHz operation.

Paper Details

Date Published: 26 July 1999
PDF: 7 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354312
Show Author Affiliations
Takashi Saito, USHIO Research Institute of Technology, Inc. (Japan)
Ken-ichi Mitsuhashi, USHIO Research Institute of Technology, Inc. (Japan)
Motohiro Arai, USHIO Research Institute of Technology, Inc. (Japan)
Kyouhei Seki, USHIO Research Institute of Technology, Inc. (Japan)
Akifumi Tada, USHIO Research Institute of Technology, Inc. (Japan)
Tatsushi Igarashi, USHIO Research Institute of Technology, Inc. (Japan)
Kazuaki Hotta, USHIO Research Institute of Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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