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Proceedings Paper

Performance characteristics of ultranarrow ArF laser for DUV lithography
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Paper Abstract

Today, commercial line-narrowed ArF lasers for Deep-UV lithography are typically producing spectral bandwidth of 0.6 pm FWHM. This value forces the stepper/scanner manufacturers to use large amount of CaF2 in the lens design as well as fused silica in order to compensate for chromatic aberrations. We describe in this paper the parameters - such as pulse duration, fluorine concentration and divergence - which influence the line-narrowing efficiency of ArF laser. We are also presenting result obtained using a new optical cavity design using an etalon as output coupler that provides bandwidth of 0.3 pm at FWHM and 0.8 pm for 95 percent of the energy, performance that could allow to greatly reduce the need for CaF2.

Paper Details

Date Published: 26 July 1999
PDF: 8 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354308
Show Author Affiliations
Alexander I. Ershov, Cymer, Inc. (United States)
Herve Besaucele, Cymer, Inc. (United States)
Palash P. Das, Cymer, Inc. (United States)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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