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Proceedings Paper

New application of negative DUV resist for topographical metal layer microlithography
Author(s): Yung-Tin Chen; Ronfu Chu
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Paper Abstract

The goal of this study is to assess the capability of a negative DUV resist with application to metal layer lithography. The major issues encountered in metal layer lithography are CD non-uniformity resulting from step height variation from memory cell to periphery and resist's bridging in the area of bank to bank connection within the cell of 64M DRAM. We have compared both positive-tone and negative-tone DUV resist with SiON as the bottom anti- reflection coatings. The results indicate that the negative DUV resists shows no resist bridging problem and has better CD uniformity across step height variation region. The CD uniformity across banks of cells has improves by 10 percent in comparison with positive-tone resist. Process windows are enhanced in both exposure latitude and DOF. The etching resistance to metal is also improved by 20 percent.

Paper Details

Date Published: 26 July 1999
PDF: 9 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354300
Show Author Affiliations
Yung-Tin Chen, Chang Gung Univ. (Taiwan)
Ronfu Chu, Nan Ya Technology Corp. (Taiwan)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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