Share Email Print
cover

Proceedings Paper

Design of multilayer optoelectronic devices
Author(s): Jurana Borgulova; Frantisek Uherek; Jaroslav Kovac; Alexander Satka
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper we report on the computer design of multilayer optoelectronic devices. The software based on the optical transfer matrix method was successfully applied for distributed Bragg reflector and resonant cavity enhanced PIN photodiode design. The designed structures based on the InP/InAlGaAs and InP/InGaAs/InAlGaAs material systems were prepared by low-pressure MOVPE method. The simulated and experimental reflectivity and photoresponse spectra of the designed and prepared structures are presented. A very good agreement between experimental and simulated results has been obtained. Our results show that the computer design based on the transfer matrix method is a useful and effective tool for the design of advanced multilayer optoelectronic structures.

Paper Details

Date Published: 14 July 1999
PDF: 9 pages
Proc. SPIE 3820, 11th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (14 July 1999); doi: 10.1117/12.353064
Show Author Affiliations
Jurana Borgulova, Slovak Univ. of Technology (Slovak Republic)
Frantisek Uherek, Slovak Univ. of Technology (Slovak Republic)
Jaroslav Kovac, Slovak Univ. of Technology (Slovak Republic)
Alexander Satka, Slovak Univ. of Technology (Slovak Republic)


Published in SPIE Proceedings Vol. 3820:
11th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Miroslav Hrabovsky; Anton Strba; Waclaw Urbanczyk, Editor(s)

© SPIE. Terms of Use
Back to Top