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Proceedings Paper

Crystallographic engineering in high-performance piezoelectric crystals
Author(s): Seung Eek Eagle Park; Satoshi Wada; Paul W. Rehrig; Shifang Liu; Leslie Eric Cross; Thomas R. Shrout
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Paper Abstract

Crystallographic engineering, a concept to utilize crystal anisotropy as well as an engineered domain configuration, resulted in significant enhancement in piezoelectric activity for normal ferroelectric BaTiO3 crystals. Electromechanical couplings (k33) approximately 85 percent and piezoelectric coefficients (d33) as high as 500 pC/N, higher or comparable to those of lead based ceramics such as PZT and significantly larger than those of tetragonal BaTiO3 crystals, were detected from crystallographically engineered orthorhombic BaTiO3 crystals. Orthorhombic BaTiO3 phase could be stabilized by Zr-doping at room temperature and enhanced electromechanical coupling (k33) approximately 75 percent was detected also by using crystallographic engineering. Macroscopic symmetry was suggested for <001> poled rhombohedral (3m) and orthorhombic (2mm) crystals, based on the engineered domain configuration.

Paper Details

Date Published: 12 July 1999
PDF: 8 pages
Proc. SPIE 3675, Smart Structures and Materials 1999: Smart Materials Technologies, (12 July 1999); doi: 10.1117/12.352781
Show Author Affiliations
Seung Eek Eagle Park, The Pennsylvania State Univ. (United States)
Satoshi Wada, The Pennsylvania State Univ. (United States)
Paul W. Rehrig, The Pennsylvania State Univ. (United States)
Shifang Liu, The Pennsylvania State Univ. (United States)
Leslie Eric Cross, The Pennsylvania State Univ. (United States)
Thomas R. Shrout, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 3675:
Smart Structures and Materials 1999: Smart Materials Technologies
Manfred R. Wuttig, Editor(s)

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