Share Email Print
cover

Proceedings Paper

Planarization of hexagonal-GaN(0001) by KrF excimer-laser ablation followed by hydrochloric acid treatment
Author(s): Toshimitsu Akane; Koji Sugioka; Hiroshi Ogino; Hiroshi Takai; Katsumi Midorikawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

GaN surface is clear etched by combination of KrF excimer laser irradiation and post chemical wet treatment using hydrochloric acid. KrF excimer laser irradiation ablates GaN surface and turns the ablated surface to Ga-rich layer. The Ga-rich layer is etched off by the hydrochloric acid treatment. X-ray photoelectron spectroscopy analysis reveals that the chemically etched surface has similar composition and chemical bonding to untreated GaN. The average roughness amazingly decreases to approximately 48 percent compared to the untreated GaN samples at the laser fluence increases beyond 1.5 J/cm2.

Paper Details

Date Published: 15 July 1999
PDF: 7 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352725
Show Author Affiliations
Toshimitsu Akane, RIKEN-Institute of Physical and Chemical Research (Japan)
Koji Sugioka, RIKEN-Institute of Physical and Chemical Research (Japan)
Hiroshi Ogino, Tokyo Denki Univ. (Japan)
Hiroshi Takai, Tokyo Denki Univ. (Japan)
Katsumi Midorikawa, RIKEN-Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

© SPIE. Terms of Use
Back to Top