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Proceedings Paper

Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition
Author(s): ZhongMin Ren; Yongfeng Lu; ZhiHong Mai; B. A. Cheong; S. K. Chow; Jian Ping Wang; Tow Chong Chong
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Paper Abstract

Boron-Carbon-Nitride BxCyNz thin films were deposited by excimer laser ablation of boron carbide under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by x-ray photoelectron spectroscope, Raman and IR spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.

Paper Details

Date Published: 15 July 1999
PDF: 9 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352724
Show Author Affiliations
ZhongMin Ren, National Univ. of Singapore (Singapore)
Yongfeng Lu, National Univ. of Singapore (United States)
ZhiHong Mai, National Univ. of Singapore (Singapore)
B. A. Cheong, Data Storage Institute (Singapore)
S. K. Chow, Data Storage Institute (Singapore)
Jian Ping Wang, Data Storage Institute (Singapore)
Tow Chong Chong, Data Storage Institute (Singapore)

Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

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