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Proceedings Paper

Laser direct dry etching of GaAs/AIGaAs multilayer
Author(s): SeKi Park; Cheon Lee; Eun Kyu Kim
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Paper Abstract

It has been studied the direct dry etching of GaAs/AlGaAs multilayer using argon ion laser. To analyze etching characteristics at an interface between GaAs and AlGaAs, local temperature profiles on the surface by a laser irradiation were calculated through 3D heat transfer equation. Etching profiles obtained in this study were somewhat different from that of GaAs bulk obtained in our previous study. Etch width of GaAs/AlGaAs interface was larger than that of the AlGaAs/GaAs. Now until, accurate mechanism of the dry etching for multilayer has not ben reported. But, it is assumed that the mechanism has to do with thermal characteristics such as thermal conductivity, absorption coefficient, and the mechanism has to do with thermal characteristics such as thermal conductivity, absorption coefficient, and melting point of materials. The phenomenon result from the fact that laser direct dry etching is dominantly thermal reaction. The maximum etching rate was 32.5 micrometers /sec and the aspect ratio of etched groove on multilayer was 0.5. This special etching profiles obtained in this study are expected to apply for a waveguide of optoelectronics and cantilever of MEMS.

Paper Details

Date Published: 15 July 1999
PDF: 8 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352716
Show Author Affiliations
SeKi Park, Inha Univ. (South Korea)
Cheon Lee, Inha Univ. (South Korea)
Eun Kyu Kim, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

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