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Proceedings Paper

Advances in pulsed laser deposition growth of nitride thin films
Author(s): Felix E. Fernandez; Manuel Pumarol; Antonio Martinez; Weiyi Jia; Yanyung Wang; Edgardo Rodriguez; Houssam A. Mourad
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Paper Abstract

Pulsed laser deposition of nitride semiconductor films offers an alternative to more usual techniques, such as MOCVD and MBE. PLD can produce good quality films at reduced growth temperatures. Rapid progress has been achieved in the laser few years, including demonstrations of epitaxial growth of GaN directly on sapphire. Work on PLD of direct- transition III- nitrides is briefly reviewed and our recent results for these materials are presented. Growth of these nitrides requires provision of nitrogen in a reactive form, which is usually supplied by NH3 gas flow. With the approach described here, reactive nitrogen is provided in an atomic beam, which has the advantage of reducing dependence on substrate temperature to surmount the kinetic energy barrier for formation, while eliminating a source of hydrogen during growth. Films grown from ceramic GaN targets are compared with those grown from liquid Ga. The latter method can offer better control of unintentional doping. InN films were also grown directly from In metal targets, with very good results in term so stoichiometry and crystalline quality. AlN films were grown from ceramic AlN targets, with excellent texture at reduced temperatures. Results are presented for crystal structure, composition and surface morphology. Optical properties were studied by transmission and luminescence spectroscopy.

Paper Details

Date Published: 15 July 1999
PDF: 12 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352706
Show Author Affiliations
Felix E. Fernandez, Univ. of Puerto Rico (United States)
Manuel Pumarol, Univ. of Puerto Rico (United States)
Antonio Martinez, Univ. of Puerto Rico (United States)
Weiyi Jia, Univ. of Puerto Rico (United States)
Yanyung Wang, Univ. of Puerto Rico (United States)
Edgardo Rodriguez, Univ. of Puerto Rico (United States)
Houssam A. Mourad, Univ. of Puerto Rico (United States)

Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

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