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Proceedings Paper

Transient temperature measurement of amorphous silicon thin films during excimer laser annealing
Author(s): Seung-Jae Moon; Ming-Hong Lee; Mutsuko Hatano; Kenkichi Suzuki; Constantine P. Grigoropoulos
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Paper Abstract

The excimer laser annealing of amorphous silicon thin films has been investigated via optical diagnostics. Amorphous silicon films of 50 nm thickness are used in laser annealing. To obtain the transient temperature variation in the laser annealing process, the thermal emission and near- IR optical properties are measured. The front transmissivity and reflectivity are measured to obtain the emissivity at the 1.52 micrometers wavelength of the probe IRHeNe laser. Significant undercooling of the liquid silicon is observed during the cooling stage. The emissivity is almost constants during the melting period, but increases during the melting and solidification transformations.

Paper Details

Date Published: 15 July 1999
PDF: 8 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352692
Show Author Affiliations
Seung-Jae Moon, Univ. of California/Berkeley (United States)
Ming-Hong Lee, Univ. of California/Berkeley (United States)
Mutsuko Hatano, Hitachi, Ltd. (United States)
Kenkichi Suzuki, Hitachi, Ltd. (Japan)
Constantine P. Grigoropoulos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

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