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Proceedings Paper

Interferometric lithography for nanoscale fabrication
Author(s): Saleem H. Zaidi; Steven R. J. Brueck
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Paper Abstract

Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching and with 3D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures over large areas and wit good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk, resonant enhanced and asymmetry and splitting.

Paper Details

Date Published: 15 July 1999
PDF: 7 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352681
Show Author Affiliations
Saleem H. Zaidi, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

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