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Proceedings Paper

Analysis of low dielectric constant and Cu-based single- and multilayered films using spectroscopic ellipsometry
Author(s): Arun R. Srivatsa; Carlos L. Ygartua
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Paper Abstract

Many materials are being considered as candidates for Low Dielectric Constant, InterLayer Dielectric (ILD) applications. It is expected that some users will introduce Low K ILD materials in Aluminum based processing. Simultaneously, considerable process development is underway worldwide for Copper based Dual Damascene structures and integration of Low K ILD materials in such structures. Spectroscopic Ellipsometry (SE) is widely used in the Integrated Circuit (IC) industry for routine production monitoring. The dispersion information (variation of refractive index with wavelength) from SE can also be correlated to the microstructure and chemical composition of thin films. This provides a powerful, non-destructive and rapid method of analysis and process characterization. In this review, we discuss the application of this technique to the characterization of single and multilayered thin films based on Low Dielectric constant materials. Results of SE analysis of copper films copper oxides and dielectric multilayered films on copper are also presented.

Paper Details

Date Published: 19 July 1999
PDF: 17 pages
Proc. SPIE 10294, Optical Metrology: A Critical Review, 102940H (19 July 1999); doi: 10.1117/12.351665
Show Author Affiliations
Arun R. Srivatsa, KLA-Tencor Corp. (United States)
Carlos L. Ygartua, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 10294:
Optical Metrology: A Critical Review
Ghanim A. Al-Jumaily, Editor(s)

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