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Proceedings Paper

CFD simulation of pulsed MOCVD to reduce gas-phase parasitic reaction
Author(s): Ning Zhou; Samuel A. Lowry; Anantha Krishnan
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Paper Abstract

A Computational Fluid Dynamics (CFD) code is used to determine the potential benefit of pulsed Metal-Organic Chemical Vapor Deposition (MOCVD). When AlN is grown using MOCVD over a range of pressures (30 to 270 Torr) and substrate temperatures (400°C to 900°C), gas-phase mixing of the precursor (TMA1) and ammonia hydride (NH3)leads to adduct formation. This adduct formation may produce some undesired particulate by-products and deplete the precursors at elevated pressure and temperature. In order to reduce this gas-phase parasitic reaction, the pulsed inlet condition as proposed by Bachmann et al. is utilized to effectively separate the precursor form ammonia in gas- phase. It is predicted that for high reactor pressure (270 Torr), the growth efficiency of AlN can be enhanced by a factor of 3 through the pulsed MOCVD technique while simultaneously reducing the particle formation. The improvement by pulsed MOCVD is also demonstrated for a proposed 3D (North Carolina State University) research reactor.

Paper Details

Date Published: 6 July 1999
PDF: 15 pages
Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); doi: 10.1117/12.351300
Show Author Affiliations
Ning Zhou, CFD Research Corp. (United States)
Samuel A. Lowry, CFD Research Corp. (United States)
Anantha Krishnan, CFD Research Corp. (United States)


Published in SPIE Proceedings Vol. 3792:
Materials Research in Low Gravity II
Narayanan Ramachandran, Editor(s)

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