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Proceedings Paper

Control and homogenization of oxygen distribution in Si crystals by the novel technique: electromagnetic Czochralski method (EMCZ)
Author(s): Masahito Watanabe; Minoru Eguchi; Taketoshi Hibiya
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Paper Abstract

A novel method for control and homogenization oxygen distribution in silicon crystals by using electromagnetic force (EMF) to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski method. An EMF in the azimuthal direction is generated in the melt by the interaction between an electric current through the melt in the radial direction and a vertical magnetic field. (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I equals 0 to 8 A and B equals 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under several conditions. The oxygen concentration in the crystals was continuously changed from 1 X 1017 to 1 X 1018 atoms/cm3 with increase of melt rotation by electromagnetic force. The homogeneous oxygen distributions in the radial directions were achieved. The continuous change of oxygen concentration and the homogenization of oxygen distribution along the radial direction are attributed to the control of the diffusion-boundary-layer at both the melt/crucible and crystal/melt by forced flow due to the EMF. This new method would be useful for growth of the large-diameter silicon crystals with a homogeneous distribution of oxygen.

Paper Details

Date Published: 6 July 1999
PDF: 8 pages
Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); doi: 10.1117/12.351292
Show Author Affiliations
Masahito Watanabe, NEC Corp. (Japan)
Minoru Eguchi, NEC Corp. (Japan)
Taketoshi Hibiya, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3792:
Materials Research in Low Gravity II
Narayanan Ramachandran, Editor(s)

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