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Proceedings Paper

Semiconductor growth interface from solution in short-duration low-gravity environment
Author(s): Yuko Inatomi; Thomas Kaiser; Peter W. Dold; Klaus-Werner Benz; Kazuhiko Kuribayashi
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Paper Abstract

An in situ observation setup for the growth process based on near-IR microscopic interferometry was modified for a short- duration low-gravity experiment. Subsequently the observation in the environments were performed to reveal the influence of strongly-damped fluid flow on the growth process using the parabolic flights of an airplane and the free-fall of a drop capsule. As result, the dissolution and growth rates were successfully obtained using the setup with a high accuracy. It was also found that the rates were strongly decelerated during the low gravity conditions.

Paper Details

Date Published: 6 July 1999
PDF: 8 pages
Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); doi: 10.1117/12.351271
Show Author Affiliations
Yuko Inatomi, Institute of Space and Astronautical Science (Japan)
Thomas Kaiser, Albert-Ludwigs-Univ. Freiburg (Germany)
Peter W. Dold, Albert-Ludwigs-Univ. Freiburg (Germany)
Klaus-Werner Benz, Albert-Ludwigs-Univ. Freiburg (Germany)
Kazuhiko Kuribayashi, Institute of Space and Astronautical Science (Japan)

Published in SPIE Proceedings Vol. 3792:
Materials Research in Low Gravity II
Narayanan Ramachandran, Editor(s)

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