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Proceedings Paper

Electromagnetic control of convection in semiconductor melts: thermoelectromagnetic convection (TEMC) and rotating magnetic fields
Author(s): Serhat Yesilyurt; Ljubomir Vjusic; Shariar Motakef
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Paper Abstract

Application of a low intensity axial magnetic field can promote significant convection during Bridgman growth of GeSi when resident thermoelectric currents at the growth interface are large due o difference of thermoelectric powers of the melt and of the crystal and the tangential temperature gradient at the interface. Thermoelectromagnetic convection (TEMC) in the GeSi melt is characterized by a meridional flow driven by the rotation of the fluid due to the azimuthal Lorentz force from currents in the radial direction, concentrated near the interface, and the axial magnetic field. A similar flow is caused by a rotating magnetic field (RMF). When the field is rotating sufficiently fast, a time-averaging azimuthal Lorentz force (almost uniform axially) causes a steady rotation of the melt, and an associated meridional convection (Ekman cells) near the interface. In this work, we developed a computational model to study convection of the GeSi melt in a microgravity environment in the presence of low intensity magnetic fields.

Paper Details

Date Published: 6 July 1999
PDF: 15 pages
Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); doi: 10.1117/12.351270
Show Author Affiliations
Serhat Yesilyurt, Cape Simulations, Inc. (United States)
Ljubomir Vjusic, Cape Simulations, Inc. (United States)
Shariar Motakef, Cape Simulations, Inc. (United States)

Published in SPIE Proceedings Vol. 3792:
Materials Research in Low Gravity II
Narayanan Ramachandran, Editor(s)

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