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Proceedings Paper

Experimental and numerical analysis of the segregation phenomena in manganese-doped gallium antimonide
Author(s): Jose Luis Plaza; Ernesto Dieguez
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Paper Abstract

In this work, manganese segregation in vertical Bridgman- grown GaSb crystals has been investigated for different ampule diameters and several growth conditions. Experimental data of their impurity distribution from atomic absorption spectroscopy and Hall measurements have been obtained and compared with numerical analysis carried out with the finite element commercial program.

Paper Details

Date Published: 6 July 1999
PDF: 9 pages
Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); doi: 10.1117/12.351267
Show Author Affiliations
Jose Luis Plaza, Univ. Autonoma de Madrid (Spain)
Ernesto Dieguez, Univ. Autonoma de Madrid (Spain)

Published in SPIE Proceedings Vol. 3792:
Materials Research in Low Gravity II
Narayanan Ramachandran, Editor(s)

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