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Proceedings Paper

Characterization of Si nanostructured surfaces
Author(s): Saleem H. Zaidi; James M. Gee; Douglas S. Ruby; Steven R. J. Brueck
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Paper Abstract

Surface scattering of Si to enhanced absorption particularly in the IR spectral region has been extensively investigated. Previous research chiefly examined approaches based on geometrical optics. These surface textures typically consist of pyramids with dimensions much larger than optical wavelengths. We have investigated a physical optics approach that relies on surface texture features comparable to, or smaller than, the optical wavelengths inside the semiconductor material. Light interaction at this are strongly dependent on incident polarization and surface profile. Nanoscale textures can be tuned for either narrow band, or broad band absorptive behavior. Lowest broad band reflection has been observed for triangular profiles with linewidths significantly less than 100 nm. Si nanostructures have been integrated into large (approximately 42 cm2) area solar cells. Internal quantum efficiency measurements in comparison with polished and conventionally textured cells show lower efficiency in the UV-visible (350 - 680 nm), but significantly higher IR (700 - 1200 nm) efficiency.

Paper Details

Date Published: 30 June 1999
PDF: 9 pages
Proc. SPIE 3790, Engineered Nanostructural Films and Materials, (30 June 1999); doi: 10.1117/12.351246
Show Author Affiliations
Saleem H. Zaidi, Univ. of New Mexico (United States)
James M. Gee, Sandia National Labs. (United States)
Douglas S. Ruby, Sandia National Labs. (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 3790:
Engineered Nanostructural Films and Materials
Akhlesh Lakhtakia; Russell F. Messier, Editor(s)

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