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Proceedings Paper

Sub-100-nm imaging in x-ray lithography
Author(s): Olga Vladimirsky; Niru V. Dandekar; Wenlong Jiang; Quinn J. Leonard; Klaus Simon; Srinivas B. Bollepalli; Yuli Vladimirsky; James Welch Taylor
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Paper Abstract

This paper analyzes and demonstrates the possibility of producing lithographic images at or below the 'diffraction limit' for synchrotron radiation-based x-ray proximity lithography. It is shown that at reasonable mask/wafer gaps of 15-30 micrometers , for feature sizes down to approximately 100 nm, a 30-40 nm uniform positive bias is observed. In proximity lithography, masks with clear features on a dark background demonstrate better linewidth control and more stable process optimization in terms of achieving smaller features: Sub-100 nm imaging requires positive bias for mask features: clear features have to be increased in sizes and the proper bias will depend on the mask/wafer gap. Features down to 43-46 nm have been formed in negative resists, and down to 60 nm in positive resist. The extendibility of synchrotron radiation-based x-ray proximity lithography into the sub-50 nm region at reasonable mask/wafer gaps of 20-30 micrometers was demonstrated.

Paper Details

Date Published: 25 June 1999
PDF: 7 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351161
Show Author Affiliations
Olga Vladimirsky, Univ. of Wisconsin/Madison (United States)
Niru V. Dandekar, Sanders, A Lockheed Martin Co. (United States)
Wenlong Jiang, Univ. of Wisconsin/Madison (United States)
Quinn J. Leonard, Univ. of Wisconsin/Madison (United States)
Klaus Simon, SAL, Inc. (United States)
Srinivas B. Bollepalli, Univ. of Wisconsin/Madison (United States)
Yuli Vladimirsky, Univ. of Wisconsin/Madison (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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