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Proceedings Paper

Thermomechanical distortions of ion-beam stencil masks during exposure
Author(s): Po-Tung Lee; Byung-Kyu Kim; Gary A. Frisque; Richard O. Tejeda; Roxann L. Engelstad; Edward G. Lovell; William A. Beckman; John W. Mitchell
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Paper Abstract

Meeting the stringent requirements on pattern placement in the sub-130 nm regime will be a challenge for any Next Generation Lithography. A key issue for all technologies will be the development of a low distortion mask. This paper describes the thermomechanical simulations performed on the ion-beam projection lithography (IPL) mask to predict distortions during exposure. Pattern-specific global distortions are identified using equivalent modeling techniques, which are based upon the use of equivalent thermal properties are presented. Finite element heat transfer and structural models have been developed to employ these equivalent properties. To demonstrate the modeling procedures, predictions of the thermomechanical response of the stencil mask for the IBM Talon layout were performed. The finite element results illustrate that by optimizing the design parameters of the exposure system, IPL mask distortions can be controlled to meet the allotted error budgets.

Paper Details

Date Published: 25 June 1999
PDF: 7 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351146
Show Author Affiliations
Po-Tung Lee, Univ. of Wisconsin/Madison (United States)
Byung-Kyu Kim, Univ. of Wisconsin/Madison (United States)
Gary A. Frisque, Univ. of Wisconsin/Madison (United States)
Richard O. Tejeda, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
William A. Beckman, Univ. of Wisconsin/Madison (United States)
John W. Mitchell, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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