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Proceedings Paper

Simulation on a new reflection type attenuated phase-shifting mask for extreme ultraviolet lithography
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Paper Abstract

We have simulated the optical behavior of a new reflective APSM by utilizing the optical multilayer thin film theory. In a typical Mo/Si multilayer structure, we show that the requirement of a reflective APSM can be met simply by adjusting the thickness of the over-coated Ge layer. A phase shift of 180 degrees results when compared light reflected from a Ge absorption layer to that form a Mo/Si multilayer, and the resultant reflectance ratio is in the range of 4-15 percent. No additional phase shifting layer is needed.

Paper Details

Date Published: 25 June 1999
PDF: 9 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351131
Show Author Affiliations
Hsuen-Li Chen, National Taiwan Univ. (Taiwan)
Lon A. Wang, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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