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Proceedings Paper

Proximity effects correction in real time
Author(s): Piotr Jedrasik
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Paper Abstract

A method for the proximity effects correction in electron beam lithography for layouts with critical dimensions below 180 nm is proposed. A parallel processing system based on an artificial neural networks is suggested as a solution to the problem. The algorithm for the learning vector generation is based on a discrete iterative regularization. Several results of the correction process for different test layouts are presented. Error analysis of the error measure is presented. The difference between the target dose and the doses deposited in each exel after the correction process is smaller than 5 percent. As a hardware implementation of the real time proximity effects corrector the radial basis functions neural system is proposed. Simulations of the Gaussian synapse cell have been done. Results of our simulations assure that our neurocorrector can precompensate for one exel from the layout in less than 60 ns.

Paper Details

Date Published: 25 June 1999
PDF: 12 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351123
Show Author Affiliations
Piotr Jedrasik, Chalmers Univ. of Technology (Sweden)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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