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Proceedings Paper

Predicting mechanical distortions in x-ray masks
Author(s): Eric P. Cotte; Roxann L. Engelstad; Edward G. Lovell; Cameron J. Brooks
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Paper Abstract

The development of a low distortion mask is essential for advanced lithographic technologies to meet the allotted error budgets for sub-130 nm regimes. Predicting mask- related distortions is the first step in the design and optimization process. This paper presents the result of simulating mechanical distortions induced in the x-ray mask during fabrication and pattern transfer. Finite element (FE) models have been used to predict the out-of-plane distortions for the fabrication of the mask blank. Numerical data are in excellent agreement with experimental data. In- plane distortions due to the pattern transfer process have also been simulated for the IBM Falcon mask layout. Parametric studies illustrate the effect of system parameters on the final in-plane distortion results.

Paper Details

Date Published: 25 June 1999
PDF: 12 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351116
Show Author Affiliations
Eric P. Cotte, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Cameron J. Brooks, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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