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Proceedings Paper

Advanced refractory-metal and process technology for the fabrication of x-ray masks
Author(s): Cameron J. Brooks; Kenneth C. Racette; Michael J. Lercel; Lynn A. Powers; Douglas E. Benoit
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Paper Abstract

This paper provides an in-depth report of the advanced materials and process technology being developed for x-ray mask manufacturing at IBM. Masks using diamond membranes as replacement for silicon carbide are currently being fabricated. Alternate tantalum-based absorbers, such as tantalum boron, which offer improved etch resolution and critical dimension control, as well as higher x-ray absorption, are also being investigated. In addition to the absorber studies, the development of conductive chromium- based hard-mask films to replace the current silicon oxynitride layer is being explored. The progress of this advanced-materials work, which includes significant enhancements to x-ray mask image-placement performance, will be outlined.

Paper Details

Date Published: 25 June 1999
PDF: 10 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351107
Show Author Affiliations
Cameron J. Brooks, IBM Microelectronics Div. (United States)
Kenneth C. Racette, IBM Microelectronics Div. (United States)
Michael J. Lercel, IBM Microelectronics Div. (United States)
Lynn A. Powers, IBM Microelectronics Div. (United States)
Douglas E. Benoit, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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