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Proceedings Paper

Sub-100-nm pattern fabrication using LB resist and e-beam or synchrotron radiation excited plasma
Author(s): Girish J. Phatak; Shinji Ogawa; Mohd Zalid Bin Harun; Shinzo Morita
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Paper Abstract

For fine pattern fabrication using e-beam lithography, the resist film thickness must be decreased, and therefore, the plasma etching process must be reformed. We have proposed the use of Electron Beam Excited Plasma (EBEP) and Synchrotron Radiation Excited Plasma (SREP) etching techniques for fine pattern etching. Our EBEP reactor uses a 1 micrometers thick polyimide interface film, which isolates the reactor from the e-beam source but allows electron transmission at the same time. The transmission of high energy electrons through the interface film cause ablation of the interface film and deposition of carbonaceous film on the substrate in the reactor. From the study of this phenomenon in Ar atmosphere, it was found that the ablated species are charged with either polarity. However, a pronounced and non-uniform deposition was observed for a particular substrate holder, which caused non-uniform electric field near the substrate. Thus, with an improved substrate holder, silicon etching was realized in CF4 gas. This etching could be observed only under negative bias condition, as seen earlier for SREP etching. Sub 100 nm line and space patterns were successfully etched with SREP and EBEP etching techniques using ultra thin Langmuir BLodgett stearic acid resist.

Paper Details

Date Published: 25 June 1999
PDF: 9 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351105
Show Author Affiliations
Girish J. Phatak, Nagoya Univ. (Japan)
Shinji Ogawa, Nagoya Univ. (Japan)
Mohd Zalid Bin Harun, Nagoya Univ. (Japan)
Shinzo Morita, Nagoya Univ. (Japan)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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