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Proceedings Paper

Actinic EUVL mask blank defect inspection system
Author(s): Seongtae Jeong; Lewis E. Johnson; Yun Lin; Senajith Rekawa; Pei-yang Yan; Patrick A. Kearney; Edita Tejnil; James H. Underwood; Jeffrey Bokor
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Paper Abstract

Recent experimental results from an actinic EUVL mask blank defect inspection system are presented. Bright-field and dark-field scans from various programmed defect samples are reported. Our results show that the current system can detect defects as small as 0.2 micrometers . Substrate roughness is identified as the limitation to the detection sensitivity. A preliminary defect counting experiment is reported and future improvements for practical defect counting are discussed.

Paper Details

Date Published: 25 June 1999
PDF: 11 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351101
Show Author Affiliations
Seongtae Jeong, Lawrence Berkeley National Lab. (United States)
Lewis E. Johnson, Lawrence Berkeley National Lab. (United States)
Yun Lin, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)
Senajith Rekawa, Lawrence Berkeley National Lab. (United States)
Pei-yang Yan, Intel Corp. (United States)
Patrick A. Kearney, Lawrence Livermore National Lab. (United States)
Edita Tejnil, Intel Corp. (United States)
James H. Underwood, Lawrence Berkeley National Lab. (United States)
Jeffrey Bokor, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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