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Proceedings Paper

High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography
Author(s): William T. Silfvast; M. Klosner; Gregory M. Shimkaveg; Howard Bender; Glenn D. Kubiak; Neal R. Fornaciari
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Paper Abstract

An intense pulsed capillary discharge source operating at 13.5 nm and 11.4 nm, suitable for use in conjunction with Mo:Si or Mo:Be coated optics, has produced an average power of approximately 1.4W within a 0.3 nm emission bandwidth from the end of the capillary when operated at a repetition rate of 100 Hz. The source is comprised of a small capillary discharge tube filled with xenon gas at low pressure to which electrodes are attached at each end. When a voltage is applied across the tube, an electrical current is generated for short periods within the capillary that produces highly ionized xenon ions radiating in the EUV. Issues associated with plasma bore erosion are currently being addressed from the standpoint of developing such a source for operation at repetition rates of greater than 1 kHz.

Paper Details

Date Published: 25 June 1999
PDF: 4 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351098
Show Author Affiliations
William T. Silfvast, CREOL/Univ. of Central Florida (United States)
M. Klosner, CREOL/Univ. of Central Florida (United States)
Gregory M. Shimkaveg, CREOL/Univ. of Central Florida (United States)
Howard Bender, CREOL/Univ. of Central Florida (United States)
Glenn D. Kubiak, Sandia National Labs. (United States)
Neal R. Fornaciari, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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