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Proceedings Paper

Sub-100-nm lithographic imaging with an EUV 10X microstepper
Author(s): John E. M. Goldsmith; Kurt W. Berger; Dan R. Bozman; Gregory Frank Cardinale; Daniel R. Folk; Craig C. Henderson; Donna J. O'Connell; Avijit K. Ray-Chaudhuri; Kenneth D. Stewart; Daniel A. Tichenor; Henry N. Chapman; Richard J. Gaughan; Russell M. Hudyma; Claude Montcalm; Eberhard Adolf Spiller; John S. Taylor; Jeffrey D. Williams; Kenneth A. Goldberg; Eric M. Gullikson; Patrick P. Naulleau; Jonathan L. Cobb
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Paper Abstract

The capabilities of the EUV 10x microstepper have been substantially improved over the past year. The key enhancement was the development of a new projection optics system with reduced wavefront error, reduced flare, and increased numerical aperture. These optics and concomitant developments in EUV reticles and photoresists have enabled dramatic improvements in EUV imaging, illustrated by resolution of 70 nm dense lines and spaces (L/S). CD linearity has been demonstrated for dense L/S over the range 100 nm to 80 nm, both for the imaging layer and for subsequent pattern transfer. For a +/- 10 percent CD specification, we have demonstrated a process latitude of +/- micrometers depth of focus and 10 percent dose range for dense 100 nm L/S.

Paper Details

Date Published: 25 June 1999
PDF: 8 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351097
Show Author Affiliations
John E. M. Goldsmith, Sandia National Labs. (United States)
Kurt W. Berger, Sandia National Labs. (United States)
Dan R. Bozman, Sandia National Labs. (United States)
Gregory Frank Cardinale, Sandia National Labs. (United States)
Daniel R. Folk, Sandia National Labs. (United States)
Craig C. Henderson, Sandia National Labs. (United States)
Donna J. O'Connell, Sandia National Labs. (United States)
Avijit K. Ray-Chaudhuri, Sandia National Labs. (United States)
Kenneth D. Stewart, Sandia National Labs. (United States)
Daniel A. Tichenor, Sandia National Labs. (United States)
Henry N. Chapman, Lawrence Livermore National Lab. (United States)
Richard J. Gaughan, Lawrence Livermore National Lab. (United States)
Russell M. Hudyma, Lawrence Livermore National Lab. (United States)
Claude Montcalm, Lawrence Livermore National Lab. (United States)
Eberhard Adolf Spiller, Lawrence Livermore National Lab. (United States)
John S. Taylor, Lawrence Livermore National Lab. (United States)
Jeffrey D. Williams, Lawrence Livermore National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Jonathan L. Cobb, Motorola (United States)


Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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