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Proceedings Paper

Resist characteristics with direct-write electron beam and SCALPEL exposure system
Author(s): Mitsuru Sato; Katsumi Omori; Kiyoshi Ishikawa; Toshimasa Nakayama; Anthony E. Novembre; Leonidas E. Ocola
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Paper Abstract

High acceleration voltage electron beam exposure is one of the possible candidates for post-optical lithography. The use of electrons, instead of photons, avoids optical related problems such as the standing wave issues. However, resists must conform to certain needs for the SCALPEL system, such as exposure in a vacuum chamber with 100kv electron beams. Taking into account the challenging requirements of high resolution, high sensitivity, low bake dependency and no outgassing, TOK has been able to develop resists to meet most of the SCALPEL system needs. However, due to the nature of chemical amplification and the PEB dependency, as is the case with DUV resist which varies for different features, we must recommend different resist for multiple features such as dense lines, isolated lines and contact holes. TOK has designed an electron beam negative resist, EN-009, which demonstrate 100nm pattern resolution. The dose to print on the SCALPEL system is 5.0(mu) C/cm2. The electron beam positive resist, EP-004M, has been designed for line and space patterns. The dose to print on the SCALPEL system is 8.25(mu) C/cm2. The processing conditions are standard, using 0.26N developer. These are the lowest exposure energies reported to date for similar resolution on this exposure tools.

Paper Details

Date Published: 25 June 1999
PDF: 10 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351094
Show Author Affiliations
Mitsuru Sato, Ohka America Inc. (Japan)
Katsumi Omori, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Kiyoshi Ishikawa, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Toshimasa Nakayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Anthony E. Novembre, Lucent Technologies/Bell Labs. (United States)
Leonidas E. Ocola, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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