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Proceedings Paper

200-mm SCALPEL mask development
Author(s): Gregory R. Bogart; Anthony E. Novembre; Avi Kornblit; Milton L. Peabody; Reginald C. Farrow; Myrtle I. Blakey; Richard J. Kasica; James Alexander Liddle; Thomas E. Saunders; Chester S. Knurek; Ian R. Johnston
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Paper Abstract

SCALPEL is a tue 4X reduction technology that capabilities on high resolution capabilities from electron beam exposure and high throughput capabilities from projection printing. Current mask blank fabrication for SCALPEL technology use widely available 100 mm, crystalline silicon wafers. The use of 100 mm crystalline wafers and a wet, through wafer etch process causes the patterned strut width to increase as the wafer is etched and must be accounted for in the mask blank fabrication process. In the wet etch process, a 100 micrometers wide strut grows to 800 micrometers at the strut-membrane interface. As a consequence, the maximum printable die size due to the wafer size and the decreased amount of open area between each strut is 8 X 8 mm. Additionally, crystal defects in the silicon wafer affect the wet etch process and contribute to mask blank failures. A partial solution for an increased die size is to increase the wafer size used to make the SCALPEL mask blank. A 200 mm wafer is capable of producing large die sizes. This can be further improved by dry etching of the grill structure to form struts with vertical sidewalls. As a result, due sizes of 25 X 25 mm or 16 X 32.5 mm can be produced depending on the grill pattern used. However, use of large wafers and dry etching for mask blank formation has significant issues that must be addressed. Among the issues to be addressed are etch chemistries, etch mask materials, and wafer handling.

Paper Details

Date Published: 25 June 1999
PDF: 7 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351089
Show Author Affiliations
Gregory R. Bogart, Lucent Technologies/Bell Labs. (United States)
Anthony E. Novembre, Lucent Technologies/Bell Labs. (United States)
Avi Kornblit, Lucent Technologies/Bell Labs. (United States)
Milton L. Peabody, Lucent Technologies/Bell Labs. (United States)
Reginald C. Farrow, Lucent Technologies/Bell Labs. (United States)
Myrtle I. Blakey, Lucent Technologies/Bell Labs. (United States)
Richard J. Kasica, Lucent Technologies/Bell Labs. (United States)
James Alexander Liddle, Lucent Technologies/Bell Labs. (United States)
Thomas E. Saunders, Lucent Technologies/Bell Labs. (United States)
Chester S. Knurek, Lucent Technologies/Bell Labs. (United States)
Ian R. Johnston, Surface Technology Systems (United Kingdom)


Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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