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Proceedings Paper

Sub-40-nm pattern replication with +/- 20% process latitude by soft-contact x-ray lithography
Author(s): David J. D. Carter; Henry I. Smith; Kee Woo Rhee; Christie R. Marrian
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Paper Abstract

This paper presents soft-contact x-ray lithography exposure results at sub-40 nm length scales and shows that the process latitude for such exposures is extremely wide. For feature sizes as large as 70 nm and as small as 30 nm in PMMA resist, no statistically significant difference in printed linewidth is seen for development times up to 50 percent greater than the time required for clearing of features. Within this 50 percent development window, dense features as small as 45 nm and isolated features as small as 30 nm are within a +/- 10 percent CD variation.

Paper Details

Date Published: 25 June 1999
PDF: 9 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351076
Show Author Affiliations
David J. D. Carter, Massachusetts Institute of Technology (United States)
Henry I. Smith, Massachusetts Institute of Technology (United States)
Kee Woo Rhee, Sachs Freeman Associates (United States)
Christie R. Marrian, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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