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Proceedings Paper

Crosstalk investigations in HgCdTe staring focal plane arrays
Author(s): K. O. Boltar; Vitaly I. Stafeev; N. G. Mansvetov; N. I. Iakovleva
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Paper Abstract

Crosstalk in 32 X 32 and 128 X 128 HgCdTe staring focal plane arrays consisting of HgCdTe photodiode array bonded with silicon MOS-multiplexer by indium bumps have been investigated. The experimental results of crosstalk caused by the diffusion of photogenerated carriers, inverse surface layers and photoresistance effect in HgCdTe substrate are presented. The influence of drain-source leakage in multiplexer switching transistors on crosstalk is discussed.

Paper Details

Date Published: 10 June 1999
PDF: 5 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350911
Show Author Affiliations
K. O. Boltar, ORION Research, Development, and Production Ctr. (Russia)
Vitaly I. Stafeev, ORION Research, Development, and Production Ctr. (Russia)
N. G. Mansvetov, ORION Research, Development, and Production Ctr. (Russia)
N. I. Iakovleva, ORION Research, Development, and Production Ctr. (Russia)


Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)

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