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Proceedings Paper

Peculiarities of growth and electrophysical properties of epitaxial films of Pb1-xSnxSe:In
Author(s): Eldar Yu. Salaev; I. R. Nuriyev; Ch. J. Jalilova; N. V. Faradjev
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Paper Abstract

Films of Pb1-xSnxSe (x equals 0,03 divided by 0,07) doped by In atoms have been grown on the substrate of BaF2(111,100) by a molecular beam condensation method. Peculiarities of growth and their electrophysical properties have been investigated. Electronographic, X-ray diffractometric and electron-microscopic methods, obtained the data on structure of films. Epitaxial films by the thickness about 1 divided by 1,5 micrometers were obtained at the substrate temperature equal (400 divided by 450) +/- 0,5C degree(s). The magnitudes of half-width of swinging curve of the X-ray diffraction changed within limits of W1/2 equals 100 divided by 200 angl.s. The concentration and mobility of the charge carriers were n equals (2 divided by 5) (DOT) 1016 cm-3 and (mu) equals (2 divided by 3) (DOT) 104 cm2/V(DOT)s, accordingly. Films had a mirror-smooth surface by planes of growth (111,100) on various substrates. The temperature dependencies of Hall coefficient RH of the Pb1-xSnxSe doped by indium (0,3 divided by 0,5 mass %) with different concentration of the charge carriers were investigated. It is shown that mobility determined from Hall and electroconductivity measurements in the impurity conductivity region changes on degree-low (mu) approximately T-v, where v equals 1,6 divided by 2,5.

Paper Details

Date Published: 10 June 1999
PDF: 3 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350900
Show Author Affiliations
Eldar Yu. Salaev, Institute of Photoelectronics (Azerbaijan)
I. R. Nuriyev, Institute of Photoelectronics (Azerbaijan)
Ch. J. Jalilova, Institute of Photoelectronics (Azerbaijan)
N. V. Faradjev, Institute of Photoelectronics (Azerbaijan)


Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices

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