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Proceedings Paper

Recent achievements in the growth of large-size Hg1-xCdxTe single crystals with homogeneous properties
Author(s): Vladimir M. Lakeenkov; N. I. Shmatov; Yu. F. Schelkin
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Paper Abstract

Hg1-xCdxTe single crystals with a diameter of more than 50 mm have been grown at a constant temperature by recrystallization of preliminarily synthesized charge under the conditions of permanent melt feeding with the solid phase. This method has been mathematically modelled. The composition homogeneity and electrical and structural properties of the single crystals for different growth conditions have been studied.

Paper Details

Date Published: 10 June 1999
PDF: 11 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350898
Show Author Affiliations
Vladimir M. Lakeenkov, State Institute of Rare Metals GIREDMET (Russia)
N. I. Shmatov, State Institute of Rare Metals GIREDMET (Russia)
Yu. F. Schelkin, State Institute of Rare Metals GIREDMET (Russia)


Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)

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