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Proceedings Paper

Photocarrier generation processes in Schottky barriers and possibilities to control the value and spectral dependence of quantum efficiency in an IR SB CCD
Author(s): V. G. Ivanov; V. I. Panasenkov; G. V. Ivanov
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Paper Abstract

It is shown theoretically and experimentally that the internal quantum efficiency dependence on quantum energy differs strongly from the standard dependences, described by the Fowler's theory, within the conditions of the hot electron resonance appearance. The problem of the `cooling path' increase for metal silicides and semiconductors is discussed. The advantages of recent IR SB CCDs from the technical parameter optimization standpoint are denoted.

Paper Details

Date Published: 10 June 1999
PDF: 6 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350897
Show Author Affiliations
V. G. Ivanov, Electron Central Scientific Research Institute (Russia)
V. I. Panasenkov, Electron Central Scientific Research Institute (Russia)
G. V. Ivanov, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)

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