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Proceedings Paper

Character of photocurrent dependence on two-level recombination impurity concentration in an intrinsic photoconductive detector
Author(s): Pavel S. Serebrennikov; Vyacheslav A. Kholodnov
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Paper Abstract

Under conditions of nonequilibrium carriers recombination through two-level impurity and of weak optical radiation photocurrent dependence on recombination impurity concentration N in the intrinsic photoresistor with extracting contacts is theoretically analyzed. It is shown that like in single-level impurity case there may be effect of gigantic photocurrent splash upon increasing in N. It is determined that photocurrent does not saturate with increasing electric field strength for a wide section of N preceding to the point of splash unlike the single-level impurity case. It is found out that the photocurrent dependence on two-level recombination impurity concentration may have two maxima. A physical interpretation of the results obtained is given.

Paper Details

Date Published: 10 June 1999
PDF: 5 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350893
Show Author Affiliations
Pavel S. Serebrennikov, ORION Research, Development, and Production Ctr. (Russia)
Vyacheslav A. Kholodnov, ORION Research, Development, and Production Ctr. (Russia)


Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)

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