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Proceedings Paper

Possibility of explanation of the noise-factor anomal dependence on carriers multiplication factor (photogain) in threshold avalanche photodetectors based on MIS-type heterostructures at the expense
Author(s): Nikolay N. Kurochkin; Vyacheslav A. Kholodnov
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Paper Abstract

A physical model for explanation of experimentally observed effect of avalanche noise-factor F decrease in MIS-type heterostructures upon a multiplication factor increase is offered. The model is based on the assumption that carriers are retarded near heteroboundary due to trapping by a potential well (for a example in SiO2/Si and TiO2/Si) or by surface levels. The calculation results correlate numerically with the experimental data.

Paper Details

Date Published: 10 June 1999
PDF: 6 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350891
Show Author Affiliations
Nikolay N. Kurochkin, ORION Research, Development, and Production Ctr. (Russia)
Vyacheslav A. Kholodnov, ORION Research, Development, and Production Ctr. (Russia)


Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)

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